(China (Mainland))
Product Summary
The K4S56163LF-XG75 is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
Absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN, VOUT: -1.0 to 3.6V; (2)Voltage on VDD supply relative to Vss, VDD, VDDQ: -1.0 to 3.6V; (3)Storage temperature, TSTG: -55 to +150℃; (4)Power dissipation, PD: 1.0W; (5)Short circuit current, IOS: 50mA.
Features
Features: (1)2.5V power supply; (2)LVCMOS compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs; (5)EMRS cycle with address key programs; (6)All inputs are sampled at the positive going edge of the system clock; (7)Burst read single-bit write operation; (8)Special Function Support; (9)DQM for masking; (10)Auto refresh; (11)64ms refresh period (8K cycle); (12)Commercial Temperature Operation (-25℃ to 70℃); (13)Extended Temperature Operation (-25℃ to 85℃); (14)54Balls BOC with 0.8mm ball pitch.
Diagrams
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